CPH5520 no. a0485-1/5 applications relay drivers, lamp drivers, motor drivers, gate drivers. features composite type with a pnp transistor and an npn transistor contained in one package, facilitating high-density mounting. ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) specifications ( ) : pnp absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (- -50)80 v collector-to-emitter voltage v ceo (- -50)80 v emitter-to-base voltage v ebo (- -)6 v collector current i c (- -)2 a collector current (pulse) i cp (- -)5 a base current i b (- -)400 ma collector dissipation p c mounted on a ceramic board (600mm 2 ? 0.8mm) 1unit 0.9 w t otal power dissipation p t mounted on a ceramic board (600mm 2 ? 0.8mm) 1.2 w junction temperature tj 150 c storage temperature tstg - -55 to +150 c marking : ew ordering number : ena0485 30707ea ti im tc-00000534 sanyo semiconductors d ata sheet CPH5520 pnp / npn epitaxial planar silicon transistors high-current switching applications tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5520 no. a0485-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe v ce =(--)2v, i c =(--)100ma 200 560 gain-bandwideth product f t v ce =(--)10v, i c =(--)300ma 420 mhz output capacitance cob v cb =(--)10v, f=1mhz (16)8 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)50ma (- -165)130 (--330)260 mv base-to-emitter saturation voltage v be (sat) i c =(--)1a, i b =(--)50ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)80 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (- -50)80 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v t urn-on time t on see specified test circuit. (35)35 ns storage time t stg see specified test circuit. (200)330 ns fall time t f see specified test circuit. (24)40 ns package dimensions electrical connection unit : mm (typ) 7017a-009 switching time test circuit 1 : collector (npn tr) 2 : collector (pnp tr) 3 : base (pnp tr) 4 : emitter common 5 : base (npn tr) sanyo : cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 543 12 1 : collector (npn tr) 2 : collector (pnp tr) 3 : base (pnp tr) 4 : emitter common 5 : base (npn tr) t op view v r r b v cc =25v v be = --5v + + 50 ? input output r l 100 f470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =0.7a for pnp, the polarity is reversed. www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5520 no. a0485-3/5 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a - -2.0 - -1.6 - -1.2 - -0.8 - -1.0 - -1.4 - -1.8 - -0.4 - -0.2 - -0.6 0 0- -0.4 - -0.2 --0.6 --0.8 --1.2 - -1.0 --1.4 - -1.6 --1.8 - -2.0 - -10ma - -8ma - -40ma 10ma 15ma 20ma 30ma 8ma 2ma 4ma 6ma i b =0ma - -4ma - -6ma - -2ma it08923 it08924 2.0 1.6 1.2 0.8 1.0 1.4 1.8 0.4 0.2 0.6 0 0 0.4 0.2 0.6 0.8 1.2 1.0 1.4 1.6 1.8 2.0 - -20ma - -60ma - -80ma - -100ma 50ma 40m a i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a - -2.00 - -1.75 - -1.25 - -0.75 - -1.50 - -1.00 - -0.50 - -0.25 0 25 c - -25 c ta= 75 c 2.00 1.50 1.00 0.50 1.75 1.25 0.75 0.25 0 it08925 it08926 0 - -0.2 --0.4 --0.6 --0.8 --1.0 0 0.2 0.4 0.6 0.8 1.0 - -25 c 25 c t a=75 c v ce =2v v ce = --2v i b =0ma h fe -- i c f t -- i c h fe -- i c f t -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz it08927 it08929 it08930 2 3 5 7 2 3 100 7 5 t a=75 c - -25 c v ce = --2v 25 c t a=75 c - -25 c v ce =2v 25 c 7 5 3 100 2 7 22 33 57 - -0.01 --0.1 --1.0 23 57 23 57 - -0.01 --0.1 --1.0 v ce =10v 23 23 57 10 3 5 3 5 7 100 2 2 7 23 57 0.01 0.1 3 23 57 0.1 2 v ce = --10v it08928 5 7 2 3 100 7 5 22 33 57 0.01 0.1 1.0 23 57 [pnp] [npn] [pnp] [npn] [pnp] [npn] [pnp] [npn] www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5520 no. a0485-4/5 cob -- v cb cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf 5 5 7 10 2 3 7 5 - -0.1 7 - -10 23 5 57 - -1.0 23 23 7 f=1mhz f=1mhz it08931 it08932 3 5 7 10 2 3 5 5 0.1 7 10 23 5 57 1.0 23 23 7 v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v - -25 c ta =75 c i c / i b =10 i c / i b =10 it08933 it008934 3 2 5 - -0.1 7 5 3 2 22 357 - -0.1 - -0.01 3 - -1.0 22 357 - -0.01 25 c - -25 c t a=75 c 3 2 5 0.1 7 5 0.01 7 5 3 2 22 357 0.1 0.01 3 1.0 22 357 3 25 c v ce (sat) -- i c v be (sat) -- i c v ce (sat) -- i c v be (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v i c / i b =20 75 c ta= - -25 c it08937 it08938 3 2 7 - -1.0 - -0.01 23 57 - -0.1 23 23 57 - -1.0 5 3 25 c - -25 c t a=75 c i c / i b =20 it08935 3 2 5 - -0.1 7 - -1.0 7 5 3 2 22 357 - -0.1 - -0.01 3 - -1.0 22 357 - -0.01 25 c - -25 c t a=75 c i c / i b =20 it08936 3 2 5 0.1 0.01 7 5 3 2 22 357 0.1 0.01 3 1.0 22 357 7 25 c i c / i b =20 75 c t a= -- 2 5 c 3 2 7 0.01 23 57 0.1 23 23 57 1.0 5 3 25 c 1.0 [pnp] [npn] [pnp] [npn] [pnp] [npn] [pnp] [npn] www.datasheet.co.kr datasheet pdf - http://www..net/
CPH5520 no. a0485-5/5 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of march, 2007. specifications and information herein are subject to change without notice. a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w [pnp / npn] [pnp / npn] it11359 0 020406 080 100 120 140 160 0.6 1.2 0.4 0.2 0.9 0.8 1.0 1.4 t otal dissipation 1unit it11358 0.01 0.1 1.0 10 23 57 23 57 23 57 23 57 1.0 0.1 0.01 2 3 5 7 2 3 5 7 2 3 5 7 100ms dc operation 10ms i cp =5a i c =2a 100 s 500 s 1ms t a=25 c single pulse for pnp minus sign is omitted mounted on a ceramic board (600mm 2 ? 0.8mm) mounted on a ceramic board (600mm 2 ? 0.8mm) www.datasheet.co.kr datasheet pdf - http://www..net/
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